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Energy Band Gap Apparatus

Product Code : SCL-PLE-11726

Quick Answer: The Energy Band Gap Apparatus finds the band gap of a semiconductor by heating a p-n junction diode in a built-in furnace from ambient to 100 °C while a micro-ammeter reads its reverse saturation current.

Last updated: 18 October 2026

Key Features

  • Built-in furnace with a mount for the p-n junction diode.
  • Heats from ambient temperature to 100 °C with fine control.
  • Micro-ammeter for reverse current and a digital thermometer.
  • Regulated DC supply holds a constant reverse bias.
  • Powder-coated metal case with an insulated heating zone.

Technical Specifications

SpecificationValue
HeaterBuilt-in furnace with diode mount
Temperature rangeAmbient to 100 °C
Current meterMicro-ammeter (µA)
ThermometerDigital
Bias supplyRegulated DC, constant reverse bias
EnclosurePowder-coated metal, insulated thermal zone

How It Is Used

The diode is reverse biased and heated in the furnace, and its reverse saturation current is recorded at a series of temperatures. Plotting the logarithm of that current against 1/T gives a straight line whose slope is used to calculate the energy gap of the semiconductor.

Frequently Asked Questions

What temperature range does the Energy Band Gap Apparatus cover?

The furnace heats the diode from ambient temperature up to 100 °C.

How is the band gap worked out with the Energy Band Gap Apparatus?

Reverse saturation current is measured at several temperatures and its logarithm plotted against 1/T; the slope gives the energy gap.

Related Physics Lab Equipment

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Buyers in Cabo Verde, Kenya, Central African Republic, Albania and Bolivia can order the Energy Band Gap Apparatus from JLab India as an export order.

For a quotation on the Energy Band Gap Apparatus, contact JLab India on +91-8569909696.

   
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